View AS8S512K32P-17LQ_512068.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Austin Semiconductor, Inc. 512K x 32 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
* *
* * * * * * *
AS8S512K32 & AS8S512K32A
PIN ASSIGNMENT (Top View)
68 Lead CQFP (Q) Military SMD Pinout Option
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
SRAM
SMD 5962-94611 (Military Pinout) MIL-STD-883
Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns Built in decoupling caps for low noise Organized as 512Kx32 , byte selectable Low power CMOS TTL Compatible Inputs and Outputs Future offerings 3.3V Power Supply
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15
FEATURES
* Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) * Timing 12ns 15ns 17ns 20ns 25ns 35ns 45ns 55ns * Package Ceramic Quad Flatpack Ceramic Quad Flatpack Pin Grid Array * Low Power Data Retention Mode * Pinout Military Commercial
XT IT
68 Lead CQFP Commercial Pinout Option (A)
I/O 16 A18 A17 CS4\ CS3\ CS2\ CS1\ NC Vcc NC NC OE\ WE\ A16 A15 A14 I/O 15
-12 -15 -17 -20 -25 -35 -45 -55
L
(no indicator) A*
CS CS
*(available with Q DESCRIPTION GENERAL package only)
The Austin Semiconductor, Inc. AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits. These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. This military temperature grade product is ideally suited for military and space applications.
CS
For more products and information please visit our web site at www.austinsemiconductor.com
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
I/O 31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A9 A8 A7 I/O 0
Q Q1 P
No.904
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
No.702
I/O17 I/O18 I/O19 Vss I/O20 I/O21 I/O22 I/O23 Vcc I/O24 I/O25 I/O26 I/O27 Vss I/O28 I/O29 I/O30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
Vcc A11 A12 A13 A14 A15 A16 CS1\ OE\ CS2\ A17 WE2\ WE3\ WE4\ A18 NC NC
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
OPTIONS
MARKINGS
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31
I/O 14 I/O 13 I/O 12 Vss I/O 11 I/O 10 I/O 9 I/O 8 Vcc I/O 7 I/O 6 I/O 5 I/O 4 Vss I/O 3 I/O 2 I/O 1
66 Lead PGA (P) Military SMD Pinout
\
CS
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
CS
CS\4 CS4\
CS
CS3\ CS\3
512K x 8
M3
512K x 8
M2
CS
I/O 24 - I/O 31
CS\2 CS2\
I/O 16 - I/O 23
CS
512K x 8
M1
CS\1 CS1\ WE\ OE\ A0 - A18
I/O 8 - I/O 15
512K x 8
M0
I/O 0 - I/O 7
MILITARY PINOUT/BLOCK DIAGRAM
COMMERCIAL PINOUT/BLOCK DIAGRAM
TRUTH TABLE
MODE Read Write(2) Standby OE\ L X X CE\ CS L L H WE\ H L X I/O DOUT DIN High Z POWER ACTIVE ACTIVE STANDBY
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss......................-.5V to +7V Storage Temperature............................................-65C to +150C Short Circuit Output Current(per I/O).................................20mA Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V Maximum Junction Temperature**...................................+150C *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
AS8S512K32 & AS8S512K32A
SRAM
This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%)
DESCRIPTION Input High (logic 1) Voltage Input Low (logic 1) Voltage Input Leakage Current ADD,OE Input Leakage Current WE, CE Output Leakage Current I/O Output High Voltage Output Low Voltage Supply Voltage CONDITIONS SYMBOL VIH VIL 0VDESCRIPTION
CONDITIONS
SYMBOL -12 Icc 250
-15 200
-17 700
MAX -20 -25 650 600
-35 570
-45 570
-55 UNITS NOTES 550 mA 3,13
CS\VIH; VCC = MAX Power Supply f = MAX = 1/ tRC (MIN) Current: Standby Outputs Open
ISBT1
80
80
240
240
190
190
150
150
mA
3, 13
CMOS Standby
VIN = VCC - 0.2V, or VSS +0.2V VCC=Max; f = 0Hz
ISBT2
80
80
80
80
80
80
80
80
mA
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
SYMBOL CADD COE CWE, CCS CIO CWE ("A" version) PARAMETER A0 - A18 Capacitance OE\ Capacitance WE\ and CS\ Capacitance I/O 0- I/O 31 Capacitance WE\ Capacitance MAX 50 50 20 20 50
AS8S512K32 & AS8S512K32A
SRAM
UNITS pF pF pF pF pF
NOTE: 1. This parameter is sampled.
AC TEST CONDITIONS Test Specifications
Input pulse levels.........................................VSS to 3V Input rise and fall times.........................................5ns Input timing reference levels...............................1.5V Output reference levels........................................1.5V Output load..............................................See Figure 1
IOL
Current Source
Device Under Test
+
+
Vz = 1.5V (Bipolar Supply)
Ceff = 50pf
Current Source
IOH
NOTES: Vz is programmable from -2V to + 7V. IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit.
Figure 1
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oCDESCRIPTION
READ CYCLE READ cycle time Address access time Chip select access time Output hold from address change Chip select to output in Low-Z Chip select to output in High-Z Output enable access time Output enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip select to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width WRITE pulse width Data setup time Data hold time Write disable to output in Low-z Write enable to output in High-Z
SYMBOL
RC AA t ACS t OH t LZCS t HZCS t AOE t LZOE t HZOE
t t
-12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
12 12 12 2 2 7 7 0 0 2 2 8 8 0 12 12 10 10 2 1 10 10 8 0 2 7 15 12 12 2 1 12 12 10 0 2 8 17 15 15 2 1 15 15 12 0 2 9 20 15 15 2 1 15 15 10 0 2 11 15 15 15 2 2 9 9 0 12 25 17 17 2 1 17 17 12 0 2 13 17 17 17 2 2 10 10 0 12 35 20 20 2 1 20 20 15 0 2 15 20 20 20 2 2 12 12 0 15 45 25 25 2 1 25 25 20 0 2 15 25 25 25 2 2 15 15 0 20 55 25 25 2 1 25 25 20 0 2 15 35 35 35 2 2 20 20 0 20 45 45 45 2 2 20 20 55 55 55 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
4,6,7 4,6,7 4,6 4,6
WC CW t AW t AS t AH t WP1 t WP2 t DS t DH t LZWE t HZWE
t
t
4,6,7 4,6,7
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
ADDRESS
tOH
4314 41 2 3 5 435132121 1132121 24 41 3 431132121 24 41 5 3
tRC
DATA I/O
ADDRESS
PREVIOUS DATA VALID
READ CYCLE NO. 2
READ CYCLE NO. 1
tAA
tAA
6 987 654321654321 765437 98 7543226 654321154321 654326 987 765431154321 654321154321 982 7 7654326 654321154321 9876
876544321 432 321 5432 876543211 321 5432 876544321 54321 876554321 43211 876543211
CS\
t tLZCS ACS
66541 72 7654329 654321187654321 654329 2309 10 754322187654321 654321187654321 210 654321187654321 7654319 210 0 654321987654321 212
tHZCS
2109876543211 5432 432 2109876544321 54321 2109876543211 5321 2109876544321 53211 432 432 2109876543211
OE\
tAOE tLZOE
4311121 221 343 4331121 121 243 4331121 121 243 4311121 221 343
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
DATA I/O
HIGH IMPEDANCE
6 tRC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
DATA VALID
DATA VALID
tHZOE
AS8S512K32 & AS8S512K32A
SRAM
654321 654321 654321 654321
ADDRESS
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1
(Chip Select Controlled)
t AW
tCW
21 565430987654321 7432109 6543 7432109 565432187654321 7432101 565432187654321 21 743212187654321 543212187654321 5654329 7 2109
tAH
8765432121 543 43 43 8765432121 54321 8765432121 34321 521 43 8765454321 54321 8765432121
WE\
CS\
tAS
tHZWE
t WP1 1
t WC
tDS
tLZWE tDH
4321 4321 4321 43211 432 4321 43211 432 4321 43211 432
4311210987654321 23 4 1 4341210987654321 13 2 1 4311210987654321 23 4 1
DATA I/O
ADDRESS
CS\
tAS
WRITE CYCLE NO. 2
(Write Enable Controlled)
t AW
tCW
t WP2 1
65432 543210 654320 543211987654321 21 654321987654321 543211987654321 210 654320 543211987654321
87654321 87654321 87654321 87654321 654321 654321 654321 654321
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
DATA I/O
WE\
tWC
7
DATA VALID DATA VALID
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
tDS
tDH tAH
AS8S512K32 & AS8S512K32A
SRAM
Austin Semiconductor, Inc.
NOTES
1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. unloaded, and f= 1 t RC(MIN) HZ.
AS8S512K32 & AS8S512K32A
SRAM
The specified value applies with the outputs 4. This parameter guaranteed but not tested. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state voltage, allowing for actual tester RC time constant.
7. At any given temperature and voltage condition, tHZCS, is less than tLZCS, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip selects and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. tRC= READ cycle time. 12. Chip enable (CS\) and write enable (WE\) can initiate and terminate a WRITE cycle. 13. ICC is for 32 bit mode.
LOW POWER CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time CONDITIONS All Inputs @ Vcc + 0.2V or Vss + 0.2V, CS\ = Vcc + 0.2V VCC = 2V VCC = 3V SYMBOL VDR ICCDR ICCDR tCDR tR 0 tRC MIN 2 MAX 20 28* UNITS V mA mA ns ns 4 4, 11 NOTES
* -12 and -15 have a 32mA limit.
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V VDR>2V
t
4.5V
CDR
t
R
CS\ 1-4
VDR
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
876543210987654321 87654321 54321 84351 54351321 84351321 576243210987654321 87654 876243210987654321 576243210987654321 87654 84351 54354321 87654321 576243210987654321 87651 876243210987654321 576213210987654321 87654 543213210987654321 84354
876543210987654321 87654321 54321 876543210987654321 87654321 5432 876543210987654321 54321 876543210987654321 87654321 1 876543210987654321 87654321 54321 876543210987654321 87654321 54321 876543210987654321 876543210987654321
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
MECHANICAL DEFINITIONS*
ASI Case #702 (Package Designator Q) SMD 5962-94611, Case Outline M
4 x D2 4 x D1 D
DETAIL A
R
1o - 7o
b
L1
B
e
SEE DETAIL A A1 A A2 E
SMD SPECIFICATIONS SYMBOL A A1 A2 B b D D1 D2 E e R L1 MIN 0.123 0.118 0.000 0.010 REF 0.013 0.800 BSC 0.870 0.980 0.936 0.050 BSC 0.005 0.035 --0.045 0.890 1.000 0.956 0.017 MAX 0.200 0.186 0.020
*All measurements are in inches.
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
MECHANICAL DEFINITIONS*
ASI Case #904 (Package Designator P ) SMD 5962-94611, Case Outline T
4xD D1 Pin 56 D2 Pin 1
(identified by 0.060 square pad)
A A1
b1
E1
e
b
Pin 66
e
Pin 11
L
SMD SPECIFICATIONS SYMBOL A A1 b b1 D D1/E1 D2 e L MIN 0.144 0.025 0.016 0.045 1.065 1.000 TYP 0.600 TYP 0.100 TYP 0.145 0.155 MAX 0.181 0.035 0.020 0.055 1.085
*All measurements are in inches.
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
MECHANICAL DEFINITIONS*
ASI Case (Package Designator Q1) SMD 5962-94611, Case Outline A
SYMBOL A A1 b B c D/E D1/E1 D2/E2 e L R
*All measurements are in inches.
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
SMD SPECIFICATIONS MIN MAX --0.200 0.054 --0.013 0.017 0.010 TYP 0.009 0.012 0.980 1.000 0.870 0.890 0.800 BSC 0.050 BSC 0.035 0.045 0.010 TYP
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
ORDERING INFORMATION
EXAMPLE: AS8S512K32AQ-15/883C Device Number AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 Options** A A A A A A A A Package Type Q Q Q Q Q Q Q Q Speed ns -12 -15 -17 -20 -25 -35 -45 -55 Options** Process L L L L L L L L /* /* /* /* /* /* /* /* EXAMPLE: AS8S512K32Q1-55/IT Device Package Options** Speed ns Options** Process Number Type AS8S512K32 A Q1 -12 L /* AS8S512K32 A Q1 -15 L /* AS8S512K32 A Q1 -17 L /* AS8S512K32 A Q1 -20 L /* AS8S512K32 A Q1 -25 L /* AS8S512K32 A Q1 -35 L /* AS8S512K32 A Q1 -45 L /* -55 AS8S512K32 A Q1 L /*
EXAMPLE: AS8S512K32P-25L/XT Device Number AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 Options** Package Type P P P P P P P P Speed ns -12 -15 -17 -20 -25 -35 -45 -55 Options** Process L L L L L L L L /* /* /* /* /* /* /* /*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range XT = Extended Temperature Range Q = Full Military Processing SPACE= Class K Equivalent -40oC to +85oC -55oC to +125oC -55oC to +125oC -55oC to +125oC
**DEFINITION OF OPTIONS
A = Commercial Pinout no indicator = Military Pinout L = Low Power Data Retention Mode
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
ASI TO DSCC PART NUMBER CROSS REFERENCE
Package Designator Q
ASI Part #
AS8S512K32Q-12L/Q AS8S512K32Q-15L/Q AS8S512K32Q-17L/Q AS8S512K32Q-20L/Q AS8S512K32Q-25L/Q AS8S512K32Q-35L/Q AS8S512K32Q-45L/Q AS8S512K32Q-55L/Q AS8S512K32Q-12/Q AS8S512K32Q-15/Q AS8S512K32Q-17/Q AS8S512K32Q-20/Q AS8S512K32Q-25/Q AS8S512K32Q-35/Q AS8S512K32Q-45/Q AS8S512K32Q-55/Q
Package Designator P
ASI Part #
AS8S512K32P-12L/Q AS8S512K32Q-15L/Q AS8S512K32P-17L/Q AS8S512K32P-20L/Q AS8S512K32P-25L/Q AS8S512K32P-35L/Q AS8S512K32P-45L/Q AS8S512K32P-55L/Q AS8S512K32Q-15/Q AS8S512K32P-12/Q AS8S512K32P-17/Q AS8S512K32P-20/Q AS8S512K32P-25/Q AS8S512K32P-35/Q AS8S512K32P-45/Q AS8S512K32P-55/Q
SMD Part #
5962-9461120HMX 5962-9461119HMX 5962-9461110HMX 5962-9461109HMX 5962-9461108HMX 5962-9461107HMX 5962-9461106HMX 5962-9461105HMX 5962-9461118HMX 5962-9461117HMX 5962-9461116HMX 5962-9461115HMX 5962-9461114HMX 5962-9461113HMX 5962-9461112HMX 5962-9461111HMX
SMD Part #
5962-9461120HTA 5962-9461119HTA 5962-9461110HTA 5962-9461109HTA 5962-9461108HTA 5962-9461107HTA 5962-9461106HTX 5962-9461105HTX 5962-9461117HTA 5962-9461118HTA 5962-9461116HTA 5962-9461115HTA 5962-9461114HTA 5962-9461113HTA 5962-9461112HTA 5962-9461111HTA
Package Designator Q1
ASI Part #
AS8S512K32Q1-12L/Q AS8S512K32Q1-15L/Q AS8S512K32Q1-17L/Q AS8S512K32Q1-20L/Q AS8S512K32Q1-25L/Q AS8S512K32Q1-35L/Q AS8S512K32Q1-45L/Q AS8S512K32Q1-55L/Q AS8S512K32Q1-12/Q AS8S512K32Q1-15/Q AS8S512K32Q1-17/Q AS8S512K32Q1-20/Q AS8S512K32Q1-25/Q AS8S512K32Q1-35/Q AS8S512K32Q1-45/Q AS8S512K32Q1-55/Q
SMD Part #
5962-9461120HAX 5962-9461119HAX 5962-9461110HAX 5962-9461109HAX 5962-9461108HAX 5962-9461107HAX 5962-9461106HAX 5962-9461105HAX 5962-9461118HAX 5962-9461117HAX 5962-9461116HAX 5962-9461115HAX 5962-9461114HAX 5962-9461113HAX 5962-9461112HAX 5962-9461111HAX
AS8S512K32 & AS8S512K32A Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13

▲Up To Search▲

Price & Availability of AS8S512K32P-17LQ

	To Download AS8S512K32P-17LQ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .